Effect of Laser Power on (100) Texture of Si Film Grown by CW laser Crystallization

Nobuo Sasaki; Muhammad Arif; Yukiharu Uraoka

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[20a-233-1~9] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Thu. Sep 20, 2018 9:30 AM - 11:45 AM 233 (233)

Takashi Noguchi(Univ. of the Ryukyus), Seiichiro Higashi(Hiroshima Univ.)

10:45 AM - 11:00 AM

[20a-233-6] Effect of Laser Power on (100) Texture of Si Film Grown by CW laser Crystallization

〇Nobuo Sasaki^1,2, Muhammad Arif², Yukiharu Uraoka² (1.Sasaki Consulting, 2.NAIST)

Keywords:crystal growth, LTPS, CW laser

We have studied the amount of (100) textures as a function of laser power in the wide range forming granular crystals and lateral crystals. The amount shows the maximum around the threshold power of lateral growth.