The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[20a-233-1~9] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Thu. Sep 20, 2018 9:30 AM - 11:45 AM 233 (233)

Takashi Noguchi(Univ. of the Ryukyus), Seiichiro Higashi(Hiroshima Univ.)

11:30 AM - 11:45 AM

[20a-233-9] Micro rolling process on a silicon wafer surface

Kanna Aoki1, Keita Ishiguro2, Masaki Denokami2, Yuya Tanahashi2, Kentaro Furusawa1, Norihiko Sekine1, Tadafumi Adschiri3, Minoru Fujii2 (1.NICT, 2.Kobe Univ., 3.Tohoku Univ.)

Keywords:three-dimensional, fine processing, silicon

Although processing technologies for silicon (Si), a basic material for electronic devices, continues to enhance their finesse, there is still no technology that corresponds to bending work of mechanical machinery. In this study, we developed a technique to bend thin Si wafer surfaces into a tube, bowl, hollow sphere by porosifying a silicon wafer surface using anodic oxidation, and performing photolithography patterning, wet etching, and oxidation in water vapor atmosphere. The mechanism of pattern deformation was analyzed from the viewpoint of structural mechanics, and the design guideline for obtaining any three-dimensional structure was established.