The 79th JSAP Autumn Meeting, 2018

Presentation information

Oral presentation

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[20a-438-1~12] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Thu. Sep 20, 2018 9:00 AM - 12:15 PM 438 (3F_Lounge)

Shota Nunomura(AIST)

10:45 AM - 11:00 AM

[20a-438-7] The Effect of Sub. Temperature and H2 Addition on DLC Films Deposited by an APμPlasma

Hiroyuki Yoshiki1, Junki Sato1, Kousuke Gando1,2 (1.Tsuruoka NCT, 2.Canon Inc.)

Keywords:atmospheric-pressure microplasma, DLC films, Plasma CVD

A pen-like plasma source (Plasma pen) has been proposed to achieve the on-site DLC coating at atmospheric pressure. DLC films were synthesized by plasma CVD using a CH4/H2/He gas mixtures. It was found that the hardness of the film significantly depends on the distance d, H2 ratio and Tsub. The indentation hardness of a film surface HIT of more than 17 GPa was obtained at a condition of d=1mm, H2 concentration of 38% and Tsub. of 300℃. Raman spectroscopic analysis showed that G-band peak position is shifted to the higher wavenumber and the background fluorescence decreases with increasing Tsub and H2 concentration.