[20a-CE-1~12] 13.5 Semiconductor devices and related technologies

[20a-CE-12] Demonstration of Ultralow (<10^-20 A/um) Off Leakage Current In-Zn-O Channel Transistor with EOT of 6.2nm

〇Nobuyoshi Saito¹, Tomoaki Sawabe¹, Junji Kataoka¹, Ueda Tomomasa¹, Tezuka Tsutomu¹, Ikeda Keiji¹ (1.Toshiba Memory Corp.)

Keywords:Oxide semiconductor