[20a-CE-1~12] 13.5 デバイス／集積化技術

▲ [20a-CE-3] Reduced Drain-Induced-Barrier-Lowering (DIBL) Variability at High Temperature in Bulk and SOTB MOSFETs

〇(M2)Shuang Gao¹、Tomoko Mizutani¹、Kiyoshi Takeuchi¹、Masaharu Kobayashi¹、Toshiro Hiramoto¹ (1.IIS, Univ. of Tokyo)

キーワード：variability, temperature, DIBL