[20a-CE-1~12] 13.5 Semiconductor devices and related technologies

[20a-CE-7] Parasitic resistance characterization of FinFETs doped by solid-diffusion of phosphorus

〇Takashi Matsukawa¹, Takahiro Mori¹, Yoshihiro Sawada², Yohei Kinoshita², Yongxun Liu¹, Meishoku Masahara¹ (1.AIST, 2.Tokyo Ohka Kogyo)

Keywords:FinFET, doping, parasitic resistance

Fin thickness reduction with the scaling of FinFETs reveals anomalous increase in the parasitic resistance due to the unrecovered ion-implantation damage. In this work, damageless doping process by solid diffusion utilizing cost-effective spin-coated phosphorus dopes silica (PDS) is implemented in FinFET fabrication process. Electrical characterization of the fabricated FinFETs with the solid diffusion process is carried out with regard to the impact on the parasitic resistance.