[20a-PA6-1~9] 15.7 Crystal characterization, impurities and crystal defects

[20a-PA6-1] Computer Simulation of Intrinsic Point Defect Behaviors Valid for All Pulling Conditions in Large-diameter Czochralski Si Crystal Growth

〇Kouji Sueoka¹, Yuji Mukaiyama², Susumu Maeda³, Masaya Iizuka², Vasif Mamedov⁴ (1.Okayama Pref. Univ., 2.STR Japan, 3.GlobalWafers Japan, 4.STR Group)

Keywords:CZ-Si crystal growth, intrinsic point defect, numerical simulation