Poster presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[20a-PA6-1~9] 15.7 Crystal characterization, impurities and crystal defects

Thu. Sep 20, 2018 9:30 AM - 11:30 AM PA (Event Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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9:30 AM - 11:30 AM

[20a-PA6-1] Computer Simulation of Intrinsic Point Defect Behaviors Valid for All Pulling Conditions in Large-diameter Czochralski Si Crystal Growth

〇Kouji Sueoka¹, Yuji Mukaiyama², Susumu Maeda³, Masaya Iizuka², Vasif Mamedov⁴ (1.Okayama Pref. Univ., 2.STR Japan, 3.GlobalWafers Japan, 4.STR Group)

9:30 AM - 11:30 AM

[20a-PA6-2] A first-principles study on driving force for grain boundary segregation of impurities in silicon

Tatsuya Yokoi¹, 〇Yusuke Noda¹, Atsutomo Nakamura¹, Katsuyuki Matsunaga¹ (1.Nagoya Univ.)

9:30 AM - 11:30 AM

△ [20a-PA6-3] Impact of Si (001) surface and SiO₂ film on the stability of metal atoms

〇(M1)Noriyuki Nonoda¹, Koji Sueoka² (1.Graduate School of Engineering, Okayama Pref. Univ., 2.Okayama Pref. Univ.)

9:30 AM - 11:30 AM

[20a-PA6-4] First-principles analysis of defect behavior related to the bulk lifetime
of silicon crystals for power device application

〇(M1)Daiki Tsuchiya¹, Koji Sueoka¹, Hidekazu Yamamoto² (1.OPU, 2.Chiba Tech)

9:30 AM - 11:30 AM

[20a-PA6-5] Evaluation of Si SJ-MOSFET by multifunctional scanning probe microscope

〇(M1)Sho Masuda¹, Yuki Uchida¹, Atsushi Doi¹, Nobuo Satoh¹, Hidekazu Yamamoto¹ (1.Chiba Inst. of Tech.)

9:30 AM - 11:30 AM

[20a-PA6-6] Evaluation of trench SiC-MOSFET by multifunctional scanning probe microscope

〇Yuuki Uchida¹, Atsushi Doi¹, Mizuki Nakajima¹, Nobuo Satoh¹, Hidekazu Yamamoto¹ (1.Chiba Inst. of Tech)

9:30 AM - 11:30 AM

[20a-PA6-7] Evaluation of strained SiC wafer by Raman scattering spectroscopy

〇(M1)Yuuki Ogura¹, Shinsuke Sakai², Hidekazu Yamamoto¹ (1.Chiba Inst of Tech, 2.Success Ltd)

9:30 AM - 11:30 AM

[20a-PA6-8] Characterization of dislocations in EFG β-Ga₂O₃ single crystal by synchrotron X-ray topography

〇Yongzhao Yao¹, Y. Sugawara¹, Y. Ishikawa¹, Y. Takahashi², K. Hirano³ (1.JFCC, 2.Nihon Univ., 3.KEK)

9:30 AM - 11:30 AM

▲ [20a-PA6-9] Lattice-plane orientation mapping of 2-inch homo-epitaxial GaN (0001) thin films by grazing incident x-ray diffraction topography

〇(PC)Jaemyung Kim¹, Okkyun Seo¹, Chulho Song¹, Satoshi Hiroi¹, Yanna Chen¹, Yoshihiro Irokawa¹, Toshihide Nabatame¹, Yasuo Koide¹, Osami Sakata¹ (1.NIMS)

Session information

[20a-PA6-1~9] 15.7 Crystal characterization, impurities and crystal defects

[20a-PA6-1] Computer Simulation of Intrinsic Point Defect Behaviors Valid for All Pulling Conditions in Large-diameter Czochralski Si Crystal Growth

[20a-PA6-2] A first-principles study on driving force for grain boundary segregation of impurities in silicon

△ [20a-PA6-3] Impact of Si (001) surface and SiO₂ film on the stability of metal atoms

[20a-PA6-4] First-principles analysis of defect behavior related to the bulk lifetime
of silicon crystals for power device application

[20a-PA6-5] Evaluation of Si SJ-MOSFET by multifunctional scanning probe microscope

[20a-PA6-6] Evaluation of trench SiC-MOSFET by multifunctional scanning probe microscope

[20a-PA6-7] Evaluation of strained SiC wafer by Raman scattering spectroscopy

[20a-PA6-8] Characterization of dislocations in EFG β-Ga₂O₃ single crystal by synchrotron X-ray topography

▲ [20a-PA6-9] Lattice-plane orientation mapping of 2-inch homo-epitaxial GaN (0001) thin films by grazing incident x-ray diffraction topography

Authentication

Session information

[20a-PA6-1~9] 15.7 Crystal characterization, impurities and crystal defects

[20a-PA6-1] Computer Simulation of Intrinsic Point Defect Behaviors Valid for All Pulling Conditions in Large-diameter Czochralski Si Crystal Growth

[20a-PA6-2] A first-principles study on driving force for grain boundary segregation of impurities in silicon

△ [20a-PA6-3] Impact of Si (001) surface and SiO2 film on the stability of metal atoms

[20a-PA6-4] First-principles analysis of defect behavior related to the bulk lifetimeof silicon crystals for power device application

[20a-PA6-5] Evaluation of Si SJ-MOSFET by multifunctional scanning probe microscope

[20a-PA6-6] Evaluation of trench SiC-MOSFET by multifunctional scanning probe microscope

[20a-PA6-7] Evaluation of strained SiC wafer by Raman scattering spectroscopy

[20a-PA6-8] Characterization of dislocations in EFG β-Ga2O3 single crystal by synchrotron X-ray topography

▲ [20a-PA6-9] Lattice-plane orientation mapping of 2-inch homo-epitaxial GaN (0001) thin films by grazing incident x-ray diffraction topography

Authentication

△ [20a-PA6-3] Impact of Si (001) surface and SiO₂ film on the stability of metal atoms

[20a-PA6-4] First-principles analysis of defect behavior related to the bulk lifetime
of silicon crystals for power device application

[20a-PA6-8] Characterization of dislocations in EFG β-Ga₂O₃ single crystal by synchrotron X-ray topography