[20a-PA6-1~9] 15.7 Crystal characterization, impurities and crystal defects

[20a-PA6-6] Evaluation of trench SiC-MOSFET by multifunctional scanning probe microscope

〇Yuuki Uchida¹, Atsushi Doi¹, Mizuki Nakajima¹, Nobuo Satoh¹, Hidekazu Yamamoto¹ (1.Chiba Inst. of Tech)

Keywords:Silicon carbide, Scanning probe microscope, Scanning capacitance force microscope

Performance improvement of silicon power devices as high performance power devices has been continuously and energetically performed.
As a result, it is approaching the limit that can be drawn out as silicon.
For this reason, silicon carbide has attracted attention in recent years as a high performance power device, and devices are being manufactured.
Therefore, we are evaluating various power devices by multifunctional scanning probe microscope.
In this report, we evaluate the trench SiC-MOSFET and report it.