Evaluation of ITO/a-Si interface chemical bonding states fabricated by reactive plasma deposition using hard X-ray photoemission spectroscopy

Tappei Nishihara; Takuto Kojima; Kanai Hiroki; Matsumura Hideki; Kamioka Takefumi; Ohshita Yoshio; Yasuno Satoshi; Hirosawa Ichiro; Atsushi Ogura

Presentation information

Oral presentation

16 Amorphous and Microcrystalline Materials » 16.3 Bulk, thin-film and other silicon-based solar cells

[20p-133-1~14] 16.3 Bulk, thin-film and other silicon-based solar cells

Thu. Sep 20, 2018 1:45 PM - 5:45 PM 133 (133+134)

Nobuyuki Matsuki(Kanagawa Univ.), Kazuhiro Goto(Nagoya Univ.)

4:30 PM - 4:45 PM

△ [20p-133-10] Evaluation of ITO/a-Si interface chemical bonding states fabricated by reactive plasma deposition using hard X-ray photoemission spectroscopy

〇Tappei Nishihara¹, Takuto Kojima¹, Kanai Hiroki¹, Matsumura Hideki², Kamioka Takefumi¹, Ohshita Yoshio³, Yasuno Satoshi⁴, Hirosawa Ichiro⁴, Atsushi Ogura¹ (1.Meiji Univ., 2.JAIST, 3.Toyota Tech Inst., 4.JASRI)

Keywords:Heterojunction Si Solar cell, ITO, HAXPES

The ITO film used for the heterojunction solar cell was deposited by the high throughput reactive plasma deposition(RPD) techiniques, and the change of the chemical bonding states of the ITO/a-Si interface before and after annealing was evaluated by angle decomposition hard X-ray photoemission spectroscopy.