The 79th JSAP Autumn Meeting, 2018

Presentation information

Symposium (Oral)

Symposium » Trends of ferroelectric HfO2 technologies

[20p-141-1~13] Trends of ferroelectric HfO2 technologies

Thu. Sep 20, 2018 1:30 PM - 6:30 PM 141 (141+142)

Tomoaki Yamada(Nagoya Univ.), Shosuke Fujii(Toshiba Memory)

2:30 PM - 3:00 PM

[20p-141-3] Why HfO2 thin films exhibit ferroelectric properties?

Akira Toriumi1, Shinji Migita2 (1.Univ. Tokyo, 2.AIST)

Keywords:ferroelectric film, HfO2

About 20 years have passed since the research and development of HfO2 started for high-k gate stacks. At present, ferroelectric HfO2 attarcts much attention rather than just high-k material in dielectric community. Various kinds of metal dopings have strong impact on the stable ferroelectricity in HfO2. What is the dopant specific property, and what is the common feature among various doped HfO2 films. These issues will be discussed for understanding the ferroelectric phase formation mechanism of HfO2.