The 79th JSAP Autumn Meeting, 2018

Presentation information

Symposium (Oral)

Symposium » Trends of ferroelectric HfO2 technologies

[20p-141-1~13] Trends of ferroelectric HfO2 technologies

Thu. Sep 20, 2018 1:30 PM - 6:30 PM 141 (141+142)

Tomoaki Yamada(Nagoya Univ.), Shosuke Fujii(Toshiba Memory)

4:45 PM - 5:15 PM

[20p-141-9] Perspective and Challenges in Ferroelectric Negative Capacitance Transistors highlighted by TCAD Simulation

Hiroyuki Ota1, Tsutomu Ikegami1, Junichi Hattori1, Hidehiro Asai1, Koichi Fukuda1, Kazuhiko Endo1, Shinji Migita1, Akira Toriumi2 (1.AIST, 2.Univ. of Tokyo)

Keywords:Ferroelectricity, Negative capacitance, subthreshold swing

Since the discovery of the ferroelectricity in HfO2, that is a well-known material as a gate insulator in state-of-the-art transistors, the negative capacitance field-effect transistors (NC-FETs) have been stirring much attention. Recently, a number of excellent and intriguing researches regarding direct observations of the negative capacitance (NC), successful demonstrations of the NC-FETs on various semiconductor including Si, Ge, and MoS2 have been reported. Moreover However, there are still many uncertainties as to the device physics in NC-FETs. In those circumstances, it is highly important to understand the device physics based on the technology computer aided design (TCAD). In this presentation, we would like to share perspectives and challenges in NC-FETs based on our in-house TCAD called “Impulse TCAD”, that has been developing for the purpose of analysis of novel devices.