[20p-141-1~13] Trends of ferroelectric HfO₂ technologies

[20p-141-9] Perspective and Challenges in Ferroelectric Negative Capacitance Transistors highlighted by TCAD Simulation

〇Hiroyuki Ota¹, Tsutomu Ikegami¹, Junichi Hattori¹, Hidehiro Asai¹, Koichi Fukuda¹, Kazuhiko Endo¹, Shinji Migita¹, Akira Toriumi² (1.AIST, 2.Univ. of Tokyo)

Keywords:Ferroelectricity, Negative capacitance, subthreshold swing

Since the discovery of the ferroelectricity in HfO₂, that is a well-known material as a gate insulator in state-of-the-art transistors, the negative capacitance field-effect transistors (NC-FETs) have been stirring much attention. Recently, a number of excellent and intriguing researches regarding direct observations of the negative capacitance (NC), successful demonstrations of the NC-FETs on various semiconductor including Si, Ge, and MoS₂ have been reported. Moreover However, there are still many uncertainties as to the device physics in NC-FETs. In those circumstances, it is highly important to understand the device physics based on the technology computer aided design (TCAD). In this presentation, we would like to share perspectives and challenges in NC-FETs based on our in-house TCAD called “Impulse TCAD”, that has been developing for the purpose of analysis of novel devices.