The 79th JSAP Autumn Meeting, 2018

Presentation information

Symposium (Oral)

Symposium » Trends of ferroelectric HfO2 technologies

[20p-141-1~13] Trends of ferroelectric HfO2 technologies

Thu. Sep 20, 2018 1:30 PM - 6:30 PM 141 (141+142)

Tomoaki Yamada(Nagoya Univ.), Shosuke Fujii(Toshiba Memory)

4:15 PM - 4:45 PM

[20p-141-8] Prospect of the HfO2 ferroelectric thin films for the use of ferroelectric gate transistor

Norifumi Fujimura1, Kenshi Takada1, Takeshi Yoshimura1 (1.Osaka Pref. Univ.)

Keywords:Ferroelectrics, adaptive learning neuromorphic devices, negative capacitance

Ferroelectric gate FET, in which the conventional gate insulator is replaced with a ferroelectric thin films has several advantages such as ultimate scalability and nondestructive readout characteristics. Moreover, it is attiractive for the super low power consumption devises such as adaptive learning neuromorphic devices and negative capacitance transistors. My talk will cover the advantages and the issues for the used of the material systems based on HfO2 for the ferroelectric gate FETs.