Keywords:Ferroelectricity, Negative capacitance, subthreshold swing
Since the discovery of the ferroelectricity in HfO2, that is a well-known material as a gate insulator in state-of-the-art transistors, the negative capacitance field-effect transistors (NC-FETs) have been stirring much attention. Recently, a number of excellent and intriguing researches regarding direct observations of the negative capacitance (NC), successful demonstrations of the NC-FETs on various semiconductor including Si, Ge, and MoS2 have been reported. Moreover However, there are still many uncertainties as to the device physics in NC-FETs. In those circumstances, it is highly important to understand the device physics based on the technology computer aided design (TCAD). In this presentation, we would like to share perspectives and challenges in NC-FETs based on our in-house TCAD called “Impulse TCAD”, that has been developing for the purpose of analysis of novel devices.