[20p-211A-1~18] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[20p-211A-8] Thermal escape of photo-excited carriers in In_0.3Ga_0.7N nanodisks fabricated by top-down nanotechnology

〇(D)Yafeng Chen¹, Takayuki Kiba², Junichi Takayama¹, Akio Higo³, Tomoyuki Tanikawa⁴, Seiji Samukawa³, Akihiro Murayama¹ (1.IST Hokkaido Univ., 2.Kitami Ins. of Tech., 3.AIMR/IFS Tohoku Univ., 4.IMR Tohoku Univ.)

Keywords:InGaN, nano-disks, carrier dynamincs

A high density and small InGaN nanostructure with high optical quality was difficult to fabricate. To solve this subject, In_0.3Ga_0.7N nanodisks (NDs) with a diameter and thickness less than 10 nm, and a sheet density is in the range of 10¹¹ cm-2, have been developed by using neutral-beam etching for InGaN QWs without plasma damage .Time-resolved PL (TRPL) was measured using a streak camera. During research to carrier dynamics, the high-temperature non-radiative process can be attributed to the hole escape, where the thermal activation energy of the PL decay time agrees well with the valance-band barrier height.