Oral presentation

[20p-211A-1~18] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Thu. Sep 20, 2018 1:15 PM - 6:15 PM 211A (211-1)

Toshihiro Nakaoka(Sophia Univ.), Haruki Sanada(NTT)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

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1:15 PM - 1:30 PM

[20p-211A-1] Visible and mid-infrared time-resolved spectroscopy of CuInS₂ colloids

〇Hiroaki Hata¹, Shun Mukai², Shinya Higashimoto², Ryosuke Nakamura¹ (1.Osaka Univ., 2.Osaka Institute of Technology)

1:30 PM - 1:45 PM

[20p-211A-2] Urbach Rule and Ground State Energy of Pbs Quantum Dots on Different Crystal Surface Orientations of Rutile-TiO₂: Interparticle Spacing Dependence

〇Taro Toyoda¹, Qing Shen¹, Naoki Nakazawa¹, Yasuha Yoshihara¹, Keita Kamiyama², Shuzi Hayase³ (1.Univ. Electro-Commun., 2.Bunkoukeiki, 3.Kyushu Inst. Tech.)

1:45 PM - 2:00 PM

△ [20p-211A-3] Metal organic frameworks as novel stabilizers for semiconductor quantum dots

〇Kohei Kumagai¹, Taro Uematsu¹, Susumu Kuwabata¹ (1.Osaka Univ.)

2:00 PM - 2:15 PM

[20p-211A-4] Temperature dependence of energy transfer dynamics between semiconductor quantum dots I

〇Hisaaki Nishimura¹, Yong-Shin Lee¹, DaeGwi Kim¹ (1.Osaka City Univ.)

2:15 PM - 2:30 PM

[20p-211A-5] Temperature dependence of energy transfer dynamics between semiconductor quantum dots II

〇Yongshin Lee¹, Hisaaki Nishimura¹, Kim DaeGwi¹ (1.Osaka City Univ.)

2:30 PM - 2:45 PM

▲ [20p-211A-6] Ligand and Solvent Effects on Hole Transport in Colloidal Quantum Dot Assemblies

〇(DC)Liming Liu¹, Satria Bistri², Yasuhiro Ishida², Takuzo Aida^1,2, Yoshihiro Iwasa^1,2 (1.The Univ. of Tokyo, 2.RIKEN)

3:00 PM - 3:15 PM

△ [20p-211A-7] Growth and Characteristics of GaAs/GaN_0.02As_0.98/GaAs core-multishell nanowires

〇Mitsuki Yukimune¹, Ryo Fujiwara¹, Mattias Jansson², Weimin Chen², Irina Buyanova², Fumitaro Ishikawa¹ (1.Ehime Univ., 2.Linkoping Univ.)

3:15 PM - 3:30 PM

[20p-211A-8] Thermal escape of photo-excited carriers in In_0.3Ga_0.7N nanodisks fabricated by top-down nanotechnology

〇(D)Yafeng Chen¹, Takayuki Kiba², Junichi Takayama¹, Akio Higo³, Tomoyuki Tanikawa⁴, Seiji Samukawa³, Akihiro Murayama¹ (1.IST Hokkaido Univ., 2.Kitami Ins. of Tech., 3.AIMR/IFS Tohoku Univ., 4.IMR Tohoku Univ.)

3:30 PM - 3:45 PM

[20p-211A-9] High density InGaN / GaN nanostructure fabricated by hydrogen environment anisotropic thermal etching (HEATE)

〇Yuuki Ooe¹, Yusuke Namae¹, Akihiro Matsuoka¹, Yusei Kawasaki¹, Daichi Ito¹, Yuuta Moriya¹, Akihiko Kikuchi^1,2 (1.Sophia Univ., 2.Sophia Nanotechnology Research Center)

3:45 PM - 4:00 PM

▲ [20p-211A-10] Electromagnetic simulation for nanocolumn rectennas

〇Shubham Gosain¹, Yodvarit Prukthichaipat¹, Toshihiro Nakaoka¹ (1.Sophia Univ.)

4:00 PM - 4:15 PM

[20p-211A-11] Zeeman splitting of Eu-ions in GaN:Eu epitaxial layer grown by MBE

〇Ryota Onoda¹, Hiroto Sekiguchi², Akihiro Wakahara², Toshihiro Nakaoka¹ (1.Sophia Univ., 2.Toyohashi Tech.)

4:15 PM - 4:30 PM

[20p-211A-12] Transport properties through Ge quantum dots in two-dimensional hole gas

〇Raisei Mizokuchi¹, Romain Maurand^2,3, Florian Vigneau^2,3, Tetsuo Kodera¹, Maksym Myronov⁴, Silvano De Franceschi^2,3 (1.Tokyo Tech, 2.Univ. Grenoble Alpes, 3.INAC-PHELIQS, CEA, 4.Univ. Worwick)

4:30 PM - 4:45 PM

[20p-211A-13] High Mobility Transportation and Phon Field Control by Si Nanopillar Structure

〇(P)Daisuke Ohori¹, Hidesato Kubota⁴, Atsushi Yamamoto³, Masayuki Murata³, Kazuhiko Endo^1,3, Seiji Samukawa^1,2,3 (1.IFS, Tohoku Univ., 2.AIMR, Tohoku Univ., 3.AIST, 4.TUS)

5:00 PM - 5:15 PM

△ [20p-211A-14] Radiative lifetime of bound excitons in GaAs with vibrational strain

〇Ryuichi Ohta¹, Hajime Okamoto¹, Takehiko Tawara^1,2, Hideki Gotoh¹, Hiroshi Yamaguchi¹ (1.NTT BRL, 2.NTT NPC)

5:15 PM - 5:30 PM

[20p-211A-15] Interdot wavefunction coupling in InGaAs based quantum dot-well coupled structure

〇Junichi Takayama¹, Satoshi Hiura¹, Takayuki Kiba², Akihiro Murayama¹ (1.IST, Hokkaido Univ, 2.Kitami Inst. of Technol.)

5:30 PM - 5:45 PM

[20p-211A-16] Temperature dependence of spin dynamics in InGaAs/GaAs dot-in-well structure

〇Mizuki Takishita¹, Satoshi Hiura¹, Junichi Takayama¹, Akihiro Murayama¹ (1.IST, Hokkaido Univ.)

5:45 PM - 6:00 PM

[20p-211A-17] Observation of phase relaxation in spin superposition by polarization- and time-resolved pump and probe measurements

〇Hiroki Muramatsu^1,2, Tetsu Ito^1,2, Hideki Gotoh³, Masao Ichida⁴, Hiroaki Ando⁴ (1.Grad. Sch. of Sci. & Tech. Shizuoka Univ., 2.RIE Shizuoka Univ., 3.NTT BRL, 4.Fac. of Sci. & Eng. Konan Univ)

6:00 PM - 6:15 PM

[20p-211A-18] Spin relaxation time of GaSb/AlSb multiple quantum wells (３)

〇Yuichi Nakamura¹, Lianhe Li², Kizuku Yamada¹, Takuya Kamezaki¹, Edmund H. Linfield², Atsushi Tackeuchi¹ (1.Waseda Univ., 2.Leed Univ.)

Poster presentation

[21p-PB4-1~8] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Fri. Sep 21, 2018 1:30 PM - 3:30 PM PB (Shirotori Hall)

△：Presentation by Applicant for JSAP Young Scientists Presentation Award
▲：English Presentation
▼：Both of Above
No Mark：None of Above

+Add all to schedule

1:30 PM - 3:30 PM

[21p-PB4-1] Analysis of optical characteristics and carrier transport
in biased GaAs/AlAs asymmetric-multiple-quantum-well

〇Shoji Goto¹, Kousuke Yoshida¹, Makoto Hosoda², Kouichi Akahane³, Naoki Ohtani¹ (1.Doshisha Univ., 2.Shizuoka Univ., 3.NICT)

1:30 PM - 3:30 PM

[21p-PB4-2] Radiative and non-radiative recombination in Si nanopillar embedded in Si_0.7Ge_0.3 composite film

〇Naoki Matsuda¹, Daisuke Ohori², Seiji Samukawa^2,3, Tetsuo Ikari¹, Atsuhiko Fukuyama¹ (1.Univ. of Miyazaki, 2.IFS, Tohoku Univ., 3.AIMR, Tohoku Univ.)

1:30 PM - 3:30 PM

[21p-PB4-3] Room Temperature Negative Differential Resistance of Si/CaF₂ Double-barrier Resonant Tunneling Diodes

〇Kodai Hirose¹, Satoshi Fukuyama¹, Yoshiro Kumagai¹, Hiroki Tonegawa¹, Masahiro Watanabe¹ (1.Tokyo Tech)

1:30 PM - 3:30 PM

[21p-PB4-4] Evaluation of current-voltage characteristics of single barrier tunneling diode using atomically-thin CaF₂/Si heterostructure

〇Satoshi Fukuyama¹, Masahiro Watanabe¹ (1.Tokyo Tech.)

1:30 PM - 3:30 PM

[21p-PB4-5] Room temperature negative differential resistance of CaF₂/Si/CaF₂resonant-tunneling structures fabricated by dry etching

〇(M2)Yoshiro Kumagai¹, Soichiro Ono¹, Kodai Hirose¹, Satoshi Fukuyama¹, Hiroki Tonegawa¹, Masahiro Watanabe¹ (1.Tokyo Tech)

1:30 PM - 3:30 PM

[21p-PB4-6] Size dependence of dielectric function spectra of multilayered CdTe nanocrystals

〇Naoki Inoue¹, DaeGwi Kim², Kazuki Wakita³, YongGU Shim¹ (1.Osaka Pref. Univ., 2.Osaka City Univ., 3.Chiba Inst. Tech.)

1:30 PM - 3:30 PM

[21p-PB4-7] Optical Properties and Stability of CH₃NH₃PbBr₃Nanoparticles with Different Polar Solvents

〇Tougo Hisanaga¹, Kiyoto Matsuishi¹ (1.Tsukuba Univ.)

1:30 PM - 3:30 PM

[21p-PB4-8] Fabrication of densely packed I-III-VI₂ nanoparticle films for realizing QD superlattices

〇Satoshi Okuyama¹, Yasushi Hamanaka¹, Toshihiro Kuzuya², Keiki Takeda², Chihiro Sekine² (1.Nagoya Inst. Tech., 2.Muroran Inst. Tech.)

Sessions

13 Semiconductors » 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[20p-211A-1~18] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[20p-211A-1] Visible and mid-infrared time-resolved spectroscopy of CuInS₂ colloids

[20p-211A-2] Urbach Rule and Ground State Energy of Pbs Quantum Dots on Different Crystal Surface Orientations of Rutile-TiO₂: Interparticle Spacing Dependence

△ [20p-211A-3] Metal organic frameworks as novel stabilizers for semiconductor quantum dots

[20p-211A-4] Temperature dependence of energy transfer dynamics between semiconductor quantum dots I

[20p-211A-5] Temperature dependence of energy transfer dynamics between semiconductor quantum dots II

▲ [20p-211A-6] Ligand and Solvent Effects on Hole Transport in Colloidal Quantum Dot Assemblies

△ [20p-211A-7] Growth and Characteristics of GaAs/GaN_0.02As_0.98/GaAs core-multishell nanowires

[20p-211A-8] Thermal escape of photo-excited carriers in In_0.3Ga_0.7N nanodisks fabricated by top-down nanotechnology

[20p-211A-9] High density InGaN / GaN nanostructure fabricated by hydrogen environment anisotropic thermal etching (HEATE)

▲ [20p-211A-10] Electromagnetic simulation for nanocolumn rectennas

[20p-211A-11] Zeeman splitting of Eu-ions in GaN:Eu epitaxial layer grown by MBE

[20p-211A-12] Transport properties through Ge quantum dots in two-dimensional hole gas

[20p-211A-13] High Mobility Transportation and Phon Field Control by Si Nanopillar Structure

△ [20p-211A-14] Radiative lifetime of bound excitons in GaAs with vibrational strain

[20p-211A-15] Interdot wavefunction coupling in InGaAs based quantum dot-well coupled structure

[20p-211A-16] Temperature dependence of spin dynamics in InGaAs/GaAs dot-in-well structure

[20p-211A-17] Observation of phase relaxation in spin superposition by polarization- and time-resolved pump and probe measurements

[20p-211A-18] Spin relaxation time of GaSb/AlSb multiple quantum wells (３)

[21p-PB4-1~8] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[21p-PB4-1] Analysis of optical characteristics and carrier transport
in biased GaAs/AlAs asymmetric-multiple-quantum-well

[21p-PB4-2] Radiative and non-radiative recombination in Si nanopillar embedded in Si_0.7Ge_0.3 composite film

[21p-PB4-3] Room Temperature Negative Differential Resistance of Si/CaF₂ Double-barrier Resonant Tunneling Diodes

[21p-PB4-4] Evaluation of current-voltage characteristics of single barrier tunneling diode using atomically-thin CaF₂/Si heterostructure

[21p-PB4-5] Room temperature negative differential resistance of CaF₂/Si/CaF₂resonant-tunneling structures fabricated by dry etching

[21p-PB4-6] Size dependence of dielectric function spectra of multilayered CdTe nanocrystals

[21p-PB4-7] Optical Properties and Stability of CH₃NH₃PbBr₃Nanoparticles with Different Polar Solvents

[21p-PB4-8] Fabrication of densely packed I-III-VI₂ nanoparticle films for realizing QD superlattices

Authentication

Sessions

13 Semiconductors » 13.6 Nanostructures, quantum phenomena, and nano quantum devices

[20p-211A-1~18] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

△ [20p-211A-3] Metal organic frameworks as novel stabilizers for semiconductor quantum dots

▲ [20p-211A-6] Ligand and Solvent Effects on Hole Transport in Colloidal Quantum Dot Assemblies

△ [20p-211A-7] Growth and Characteristics of GaAs/GaN0.02As0.98/GaAs core-multishell nanowires

▲ [20p-211A-10] Electromagnetic simulation for nanocolumn rectennas

△ [20p-211A-14] Radiative lifetime of bound excitons in GaAs with vibrational strain

[21p-PB4-1~8] 13.6 Nanostructures, quantum phenomena, and nano quantum devices

Authentication

△ [20p-211A-7] Growth and Characteristics of GaAs/GaN_0.02As_0.98/GaAs core-multishell nanowires