The 79th JSAP Autumn Meeting, 2018

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Oral presentation

15 Crystal Engineering » 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

Thu. Sep 20, 2018 1:45 PM - 6:00 PM 221C (2Ｆ_Lounge1)

Shin-Ichiro Kuroki(Hiroshima Univ.), Kazuma Eto(AIST)

2:30 PM - 2:45 PM

△ [20p-221C-4] Formation of low resistivity contact on p-type of 4H-SiC using laser doping

〇(M2)Kento Okamoto1, Kikuchi Toshifumi1, Ikeda Akihiro2, Ikenoue Hiroshi1, Asano Tanemasa1 (1.Kyushu Univ., 2.Sojo Univ.)

Keywords:semiconductor, SiC, ohmic contact