[20p-221C-1~15] 15.6 Group IV Compound Semiconductors (SiC)

[20p-221C-5] Performance improvement of 3C-SiC photoelectrodes by surface area expansion

〇(M2)Tomohiro Ambe¹, Masashi Kato¹ (1.Nagoya Inst.)

Keywords:etching, cocatalyst, photoelectrode

3C-SiC is expected as the photoelectrode materials that visible light absorption is possible by stability chemically. We reported the performance enhancement of the 3C-SiC photoelectrode by the formation in Pt cocatalyst before. I added it in this study as above and gave etching for 3C-SiC and aimed at the contact area increase with the electrolyte and the increase of the formation position of the cocatalyst by enlarging surface area.