[20p-234A-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

▼ [20p-234A-17] Highly Reliable Low Temperature (180℃) Solution Processed Passivation for Amorphous Solution Processed In-Zn-O Thin-Film Transistors

〇(M1)Aimi Syairah Safaruddin¹, Juan Paolo Bermundo¹, Naofumi Yoshida², Toshiaki Nonaka², Mami Fujii¹, Yasuaki Ishikawa¹, Yukiharu Uraoka¹ (1.Nara Institute of Science and Technology, 2.Merck Performance Materials Ltd.)

Keywords:amorphous oxide semiconductors, low temperature, passivation

The interaction between ambient environment or the adsorption-desorption of oxygen and water molecules at the back channel of bottom gate amorphous InZnO (a-IZO) thin-film transistors (TFTs) is one of the biggest issues that greatly affects the performance and reliability of TFTs. The issue can be overcome by depositing a passivation at the back channel as a protection barrier. This work presents the performance of solution processed a-IZO TFTs incorporated with different types of Polysilsesquioxane (PSQ) passivation layers fabricated at low temperatures of 180 °C. This PSQ passivation was designated to be cured at low temperature, thus giving an extra merit for the formation of flexible substrate. The reliability of a-IZO TFTs were studied with positive bias stress test (Vgs=20V) for 10000 sec, negative bias stress test (Vgs=-20V) for 10000 sec, and humidity stress test with relative humidity of 98% for 2 h.