The 79th JSAP Autumn Meeting, 2018

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21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20p-234A-1~18] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Thu. Sep 20, 2018 1:30 PM - 6:30 PM 234A (234-1)

Masataka Higashiwaki(NICT), Tetsuya Yamamoto(Kochi Univ. of Tech.), Mutsumi Kimura(Ryukoku Univ.)

2:00 PM - 2:15 PM

[20p-234A-3] Oxygen Partial Pressure and Growth Temperature Effects on the Growth of ε-Gallium Oxide on c-Plane Sappier Substrates via Halide Vapor Phase Epitaxy

〇(DC)Nao Takekawa1, Mayuko Sato1, Murakami Hisashi1, Kumagai Yoshinao1 (1.Tokyo Univ. of Agric. and Tech.)

Keywords:Ga2O3, Halide Vapor Phase Epitaxy, Meta stable Phase