The 79th JSAP Autumn Meeting, 2018

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Oral presentation

8 Plasma Electronics » 8.2 Plasma deposition of thin film, plasma etching and surface treatment

[20p-438-1~21] 8.2 Plasma deposition of thin film, plasma etching and surface treatment

Thu. Sep 20, 2018 1:45 PM - 7:15 PM 438 (3F_Lounge)

Kenji Ishikawa(Nagoya Univ.), Mitsuhiro Omura(Toshiba Memory)

3:30 PM - 3:45 PM

[20p-438-8] SiO2 and Si etching reactions by SFx + ion bombardment

〇Kazuhiro Karahashi1, Tomoko Ito1, Junichi Hashimoto2, Mitsuhiro Omura2, Hisataka Hayashi2, Satoshi Hamaguchi1 (1.Graduate School of Engineering, Osaka Univ., 2.Toshiba Momory Corporation)

Keywords:ion, etching yield