[20p-PA5-1~11] 8.1 Plasma production and diagnostics

[20p-PA5-5] Development of retarding field energy analyzer for measuring energy distribution of ions incident on a substrate

〇Yoshinobu Matsuda¹, Masaki Ishiba¹, Tomohiro Furusato¹, Takahiko Yamashita¹ (1.Nagasaki Univ.)

Keywords:retarding field energy analyser, ion energy distribution, magnetron sputtering

The greatest problem in planar magnetron sputtering deposition using an oxide target is deterioration of the film quality on the substrate surface opposite to the target eroded region, that is, degradation of film composition and deterioration of crystallinity. This is because the high-energy oxygen negative ions released from the oxide target erosion region and accelerated in the target sheath are incident on the counter substrate. For grasping the ion energy distribution on the substrate during sputter deposition of a metal doped ZnO target, a multi grid retarding field energy analyzer (RFEA) was fabricated and its basic operation characteristics were investigated. It was confirmed that in the RF magnetron discharge of 1 Pa and 10 W, positive ions are incident as an ion beam of about 20 eV to the floating electrode, reflecting the time-averaged plasma spatial potential. Measurement results of electrons and negative ions will be reported at the conference.