[21a-135-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21a-135-1] First-principles Study of Charging Properties of Points Defects in a-SiO₂

〇Yuto Shiraishi¹, Shota Yamazaki¹, Takashi Nakayama¹ (1.Chiba Univ.)

Keywords:points defects