[21a-135-1~10] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [21a-135-2] Low temperature deformation of single crystal Si by direct electric heating and the molecular dynamics simulation

〇(M1)Kai Tokuhiro¹, Taiki Sakamoto¹, Masahiro Shimizu¹, Yasuhiko Shimotsuma¹, Kiyotaka Miura¹, Satoru Hachinohe² (1.Kyoto Univ., 2.Proud Inc.)

Keywords:transfer process, molecular dynamics calculation, semiconductor

We have succeeded in plastically deforming single crystal CZ-Si at 850℃ lower than the melting point by 600℃ for 10 minutes with pressure and heat treatment by direct electric heating . In this study, uniaxial compression was performed without current in order to reproduce the deformation of single crystal Si by molecular dynamics calculation. In addition, we fabricated a mold with a fine pattern by FIB, and confirmed that the pattern can be transferred to the surface of the single crystal Si by direct electric heating.