[21a-145-1~9] 13.3 Insulator technology

[21a-145-8] Chemical state analysis of ferroelectric HfSiO MIM structure by HAXPES evaluation

〇Koji Usuda¹, Yuuichi Kamimuta¹, Shoichi Kabuyanagi¹, Masahiko Yoshiki², Mitsuhiro Tomita¹, Saitoh Masumi¹ (1.Toshiba Memory, 2.Toshiba R&D Center)

Keywords:HAXPES, FTJ

We present direct evaluation of a buried ferroelectric HfSiO layer beneath a top TiN electrode with MIM capacitor structure. Since inelastic mean free path for HAXPES is several times deeper than that for conventional XPS, we clearly measured Hf4f spectrum of HfSiO and revealed that chemical bonding state varied after thermal annealing of the HfSiO for crystallization. The method provides powerful assistance for such process optimization for actual structure of FTJ devices.