11:15 AM - 11:30 AM
[21a-145-9] Investigation of forming-free resistive switching properties in Al/HfO2/Si structure
Keywords:resistive random access memory, HfO2, MIS structure
Oral presentation
13 Semiconductors » 13.3 Insulator technology
Fri. Sep 21, 2018 9:00 AM - 11:30 AM 145 (Reception Hall)
Osamu Nakatsuka(Nagoya Univ.), Ishizaki Hiroki(Saitama Inst. of Tech.)
11:15 AM - 11:30 AM
Keywords:resistive random access memory, HfO2, MIS structure