[21a-233-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

△ [21a-233-1] Production of Si by reduction of SiCl₄ using remotely supplied hydrogen radical

〇Yuji Okamoto^1,2, Yuya Nakamura^1,2, Yoshikazu Suzuki², Masatomo Sumiya¹ (1.NIMS, 2.Univ. of Tsukuba)

Keywords:high purity silicon, hydrogen radical, SiCl4

High purity silicon is produced by hydrogen gas reduction of SiHCl₃ at 1200°C. However, SiCl₄ by-product is also produced from the thermal decomposition of SiHCl₃ and the SiCl₄ cannot be reduced by hydrogen at the temperature. In this study, we attempted to reduce SiCl₄ at 900°C using remotely supplied hydrogen radicals to produce Si. The amount of produced Si increases with the density of hydrogen radicals, which suggests the effect of hydrogen radicals on the SiCl₄ reduction.