[21a-233-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[21a-233-10] Increasing silicon epitaxial growth rate for minimal CVD reactor

〇Toshinori Takahashi¹, Mitsuko Muroi¹, Miya Matsuo¹, Habuka Hitoshi¹, Shinichi Ikeda^2,3, Yuuki Ishida^2,3, Shiro Hara^2,3 (1.Yokohama Nat. Univ, 2.MINIMAL, 3.AIST)

Keywords:minimal, process of film production, temperature

Silicon epitaxial growth rate for minimal CVD reactor was evaluated, when temperature under a substrate or source gas flow rate was changed.