The 79th JSAP Autumn Meeting, 2018

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13 Semiconductors » 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[21a-233-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

Fri. Sep 21, 2018 9:00 AM - 12:00 PM 233 (233)

Takashi Noguchi(Univ. of the Ryukyus), Taizoh Sadoh(Kyushu Univ.)

11:30 AM - 11:45 AM

[21a-233-11] Effect of SiHCl3 gas concentration on transport phenomena in Minimal Silicon CVD Reactor

〇(M1)Kenta Irikura1, Hitoshi Habuka1 (1.Yokohama Nat. Univ.)

Keywords:Minimal, Transport phenomena, Raw material concentration

Minimal Fab using small silicon wafer (diameter 12.5 mm) has been proposed in order to produce appropriate number of various semiconductor electronic components without waste. In order to develop CVD device used for minimal fabs, numerical analysis was used to envisage the transport phenomena in the device. In particular, the influence of trichlorosilane concentration on epitaxial growth was discussed in this study.