[21a-233-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[21a-233-12] Silicon Nitride Film Formations Using Magnetic-Mirror Confined Plasma CVD Equipment for Minimal Fab System

〇Tetsuya Goto¹, Seiji Kobayashi², Yuki Yabuta³, Shigetoshi Sugawa¹, Shiro Hara^4,5 (1.Tohoku Univ., 2.Kotec, 3.Seinan Industries, 4.AIST, 5.MINIMAL)

Keywords:minimal fab system, silicon nitride film, Plasma CVD

We developed a new compact magnetic mirror confined ECR plasma source for the plasma CVD used in the minimal fab system which has been developed by AIST as the new semiconductor manufacturing system. It was found that the stability against HF solutions of the silicon nitride film deposited using this new system was almost the same as that of the LPCVD silicon nitride film deposited at 750 oC. Good coverage ability was also confirmed.