[21a-233-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[21a-233-9] The epitaxial growth of deposited amorphous Si layer on hydrogen-terminated surfaces using ion beam induced epitaxial crystallization with ion beam mixing

〇Gosuke Yachida¹, Yasushi Hoshino¹, Jyoji Nakata¹ (1.Kanagawa Univ.)

Keywords:ion beam induced epitaxial crystallization, ion beam mixing, hydrogen-terminated Si