Gosuke Yachida

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Speaker, Author, Co-Author

Fri. Sep 21, 2018 9:00 AM - 12:00 PM 233 (233)

Oral presentation
| 13 Semiconductors
| 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

[21a-233-1~12] 13.4 Si wafer processing /Si based thin film /Interconnect technology/ MEMS/ Integration technology

11:00 AM - 11:15 AM

[21a-233-9] The epitaxial growth of deposited amorphous Si layer on hydrogen-terminated surfaces using ion beam induced epitaxial crystallization with ion beam mixing

〇Gosuke Yachida¹, Yasushi Hoshino¹, Jyoji Nakata¹ (1.Kanagawa Univ.)