[21a-331-1~12] 13.7 Compound and power electron devices and process technology

[21a-331-2] Reverse bias annealing in N-polar GaN MIS-HEMTs

〇Tetsuya Suemitsu¹, Kiattiwut Prasertsuk², Tomoyuki Tanikawa², Takeshi Kimura², Shigeyuki Kuboya², Takashi Matsuoka² (1.CIES, Tohoku Univ., 2.IMR, Tohoku Univ.)

Keywords:transistor, gallium nitride

Nitrogen-polar GaN HEMTs have a back barrier layer that realizes superior confinement for two-dimensional electron gas over the conventional Ga-polar GaN HEMTs. On the other hand, MIS gate structure is required to suppress the gate leakage current because of the low Schottky barrier height of the GaN channel at the top of the epitaxial layers. In this study, the reverse bias annealing that is reported for Ga-polar HEMTs to improve the stability of MIS gates is applied to the N-polar HEMTs for the first time and its effect on the device characteristics is compared with the results on Ga-polar HEMTs.