[21p-135-1~16] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

△ [21p-135-10] Fundamental Study on Graphene-Assisted Chemical Etching of Ge Surface
- Temperature Dependence of Etching Rate and Evaluation of Activation Energy -

〇Tomoki Hirano¹, Yuki Nakata¹, Hiroto Yamashita¹, Shaoxian Li¹, Kentaro Kawai¹, Kazuya Yamamura¹, Kenta Arima¹ (1.Osaka Univ.)

Keywords:semiconductor surface, reduced graphene oxide, etching

We have investigated the fundamental properties of graphene-assisted chemical etching, which is preferential etching of Ge surfaces in contact with reduced graphene oxide (rGO) in water. In this study, in order to realize higher etching rate, we revealed the temperature dependence of the etching rate. Based on this temperature dependence, we analyzed the Arrhenius plot. It turns out that the activation energy of etching becomes lower on a Ge surface in contact with rGO sheets than on a Ge surface just placed in water.