[21p-135-1~16] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[21p-135-14] Analysis of adhesion behavior of a silica abrasive grain to silicon oxide film by molecular dynamics simulations

〇Koichi Masuya¹, Masashi Obuchi¹, Satomi Hamada¹, Masuhiro Mikami², Chikako Takatoh¹ (1.Ebara Corp., 2.Keio Univ.)

Keywords:chemical mechanical polishing, molecular dynamics, numerical simulation

In order to help development of post-polishing cleaning in CMP equipment, it is required to elucidate the mechanism of adhesion of abrasive to the silicon oxide wafer film in water and estimate free energy indicating adhesion tendency. Since it is considered that nanoscopic phenomena such as molecular structure are involved in adhesion of abrasive grains, we aim at estimation of free energy between abrasive and the silicon oxide wafer film with molecular dynamics method, which is a numerical analysis method for reproducing the dynamics of atoms.