The 79th JSAP Autumn Meeting, 2018

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Oral presentation

13 Semiconductors » 13.3 Insulator technology

[21p-145-1~14] 13.3 Insulator technology

Fri. Sep 21, 2018 1:15 PM - 5:00 PM 145 (Reception Hall)

Keisuke Yamamoto(Kyushu Univ.), Yasushi Hotta(Univ. of Hyogo)

1:30 PM - 1:45 PM

[21p-145-2] Characteristic change of GeO 2 / Ge interface by Hf-Post Metallization Annealing

〇Haruka Fujiwara1, Yoshitaka Iwazaki1, Tomo Ueno1, Yamada Hiroshi1, Mitaro Namiki1 (1.Tokyo Univ. of Agri. & Tech.)

Keywords:insulator, Ge