[21p-146-1~17] 15.4 III-V-group nitride crystals

[21p-146-4] Flow-assisted Liquid Phase Epitaxy of GaN at atmospheric pressure

〇Shigeya Naritsuka¹, Daisuke Kambayashi¹ (1.Meijo Univ.)

Keywords:semiconductor, liquid phase epitaxy, GaN

It is reported that GaN LPE without use of Na addictive at atmospheric pressure is good for reducing the cost of GaN growth. However, the growth rate is very slow. Therefore, this time, the flow-assisted liquid phase epitaxy (FA-LPE) is combined with the conventional growth method to increase the growth rate. Consequently, it is found from the experiment results that the growth rate is successfully increased with increasing the rotation speed of the inner boat. This result suggests that FA-LAP is useful to enhance the transportation of N atoms in the solution and, consequently, to effectively increase the growth rate.