Fabrication of large-diameter GaN substrate with low curvature using the sapphire dissolution technique in the Na-flux growth

Presentation information

Oral presentation

15 Crystal Engineering » 15.4 III-V-group nitride crystals

Fri. Sep 21, 2018 1:30 PM - 6:00 PM 146 (Reception Hall)

Tsutomu Araki(Ritsumeikan Univ.), Narihito Okada(Yamaguchi Univ.)

2:30 PM - 2:45 PM

〇Takumi Yamada¹, Masayuki Imanishi¹, Kosuke Murakami¹, Kosuke Nakamura¹, Masashi Yoshimura¹, Yusuke Mori¹ (1.Osaka Univ.)

Keywords:Na-flux method, Gallium Nitride