[21p-232-1~18] 6.2 カーボン系薄膜

▲ [21p-232-5] Atomistic simulation of Ti-Diamond contact

〇Manoharan Muruganathan¹、Hiroshi Mizuta^1,2 (1.JAIST、2.Hitachi Cam Lab)

キーワード：Diamond, Ti-Diamond contact

Diamond has the outstanding physical properties such as wide band gap, high breakdown field, and high thermal conductivity. Due to these unique characteristics, it is being well explored for high power as well as high temperature semiconductor devices [1]. In general, metal-semiconductor contacts play a vital role in the semiconductor device technology. The microscopic details of metal-diamond contact are crucial to understand the complex physics of the diamond devices. Till now most of the reported theoretical study of metal-diamond contact are based on the device level models. In this research work, we report the atomistic simulation of Ti-diamond contact device based on density functional theory (DFT) and nonequilibrium Green’s function (NEGF) formalism.