Tomoki Ishikawa

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Speaker, Author, Co-Author

Sun. Mar 18, 2018 9:00 AM - 12:00 PM B301 (53-301)

Oral presentation
| 13 Semiconductors
| 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

[18a-B301-1~11] 13.1 Fundamental properties, surface and interface, and simulations of Si related materials

10:30 AM - 10:45 AM

[18a-B301-6] Electronic structure prediction of oxygen vacancy in Si/SiO₂ by first principle calculation

〇Tomoki Ishikawa¹, Kaku Taniuchi¹, Yukihiko Uchi¹, Takahiro Yamamoto² (1.AsahiKASEI, 2.Tokyo Univ. of Sci.)