Kenta Chokawa

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Speaker, Author, Co-Author

Sun. Mar 18, 2018 1:45 PM - 7:00 PM C302 (52-302)

Oral presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[18p-C302-1~19] 13.7 Compound and power electron devices and process technology

3:00 PM - 3:15 PM

△ [18p-C302-6] Theoretical prediction of a self-forming gallium oxide at an n-type GaN/SiO₂ interface

〇Kenta Chokawa¹, Tetsuo Narita², Daigo Kikuta², Tetsu Kachi³, Koji Shiozaki³, Kenji Shiraishi^3,1 (1.Graduate School of Engineering, Nagoya Univ., 2.Toyota Central R&D Labs., Inc., 3.IMaSS, Nagoya Univ.)

Mon. Mar 19, 2018 9:00 AM - 12:15 PM D103 (56-103)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[19a-D103-1~12] 15.6 Group IV Compound Semiconductors (SiC)

11:15 AM - 11:30 AM

[19a-D103-9] Prediction of vapor phase reactions and surface reconstruction structures in the CVD process of SiC

〇Kenta Chokawa¹, Yoshihiro Kangawa^2,4, Emi Makino³, Norikazu Hosokawa³, Shoichi Onda⁴, Kenji Shiraishi^4,1 (1.Graduate School of Engineering, Nagoya Univ., 2.Kyushu Univ., 3.DENSO CORP., 4.IMaSS, Nagoya Univ.)

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