Eitetsu Katagiri

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Speaker, Author, Co-Author

Tue. Mar 20, 2018 9:00 AM - 11:30 AM E201 (57-201)

Oral presentation
| 21 Joint Session K
| 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-E201-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

9:45 AM - 10:00 AM

△ [20a-E201-4] Relationship between crystal defects and leakage current of HVPE (001) β-Ga₂O₃Schottky barrier diodes

〇(B)Eitetsu Katagiri¹, Tomoya Moribayashi¹, Kohei Sasaki^2,3, Katsumi Kawasaki⁴, Jun Hirabayashi⁴, Akito Kuramata^2,3, Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Tech., 3.Tamura Corp., 4.TDK Corp.)