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21 Joint Session K » 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

[20a-E201-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

Tue. Mar 20, 2018 9:00 AM - 11:30 AM E201 (57-201)

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9:00 AM - 9:15 AM

△ [20a-E201-1] Synchrotron X-ray Topography Observation of Defects in HVPE-Grown Epitaxial Film of β-Ga₂O₃

〇Satoshi Masuya¹, Kohei Sasaki^2,3, Akito Kuramata^2,3, Osamu Ueda⁴ (1.Saga Univ., 2.Novel Crystal Tech., 3.Tamura Corp., 4.Kanazawa Inst. Tech.)

9:15 AM - 9:30 AM

[20a-E201-2] Stacking Faults in β-Ga₂O₃ I. Slip System and Partial Dislocations

〇Hirotaka Yamaguchi¹ (1.AIST)

9:30 AM - 9:45 AM

[20a-E201-3] Stacking Faults in β-Ga₂O₃ II. Observation by X-ray Topography

〇Hirotaka Yamaguchi¹, Akito KUramata² (1.AIST, 2.Novel Crystal Tech.)

9:45 AM - 10:00 AM

△ [20a-E201-4] Relationship between crystal defects and leakage current of HVPE (001) β-Ga₂O₃Schottky barrier diodes

〇(B)Eitetsu Katagiri¹, Tomoya Moribayashi¹, Kohei Sasaki^2,3, Katsumi Kawasaki⁴, Jun Hirabayashi⁴, Akito Kuramata^2,3, Makoto Kasu¹ (1.Saga Univ., 2.Novel Crystal Tech., 3.Tamura Corp., 4.TDK Corp.)

10:15 AM - 10:30 AM

[20a-E201-5] Growth of high-quality single crystals of β-Ga₂O₃ by FZ method

〇Toshimitsu Ito¹, Ozaki Yasuko¹, Yasuhide Tomioka¹, Hideyuki Watanabe¹ (1.AIST)

10:30 AM - 10:45 AM

[20a-E201-6] Structural Analysis of (AlGa)₂O₃ Thin Films on Ga₂O₃ (010) Substrates Grown by RF-MBE

Lingaparthi Ravikiran¹, Yoshiaki Nakata¹, Akito Kuramata², Shigenobu Yamakoshi², 〇Masataka Higashiwaki¹ (1.NICT, 2.Tamura Corp.)

10:45 AM - 11:00 AM

△ [20a-E201-7] Removal of Si surface impurities from β-Ga₂O₃ (100) substrate by using wet etching

〇Jungsoo Lee¹, Ryo Wakabayashi¹, Kohei Yoshimatsu¹, Motohisa Kado², Akira Ohtomo^1,3 (1.Tokyo Tech., 2.Toyota Motor Corp., 3.MCES)

11:00 AM - 11:15 AM

[20a-E201-8] Crystal Orientation of NiO Thin Films Formed on β-Ga₂O₃ Substrates

〇Shinji Nakagomi¹, Takashi Yasuda¹, Yoshihiro Kokubun¹ (1.Ishinomaki Senshu Univ.)

11:15 AM - 11:30 AM

[20a-E201-9] UV Detection Properties of NiO/β-Ga₂O₃ Heterojunction Photodiodes

〇Shinji Nakagomi¹, Hikaru Sasaki¹, Shinya Meguro¹, Yoshihiro Kokubun¹ (1.Ishinomaki Senshu Univ.)

Session information

[20a-E201-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [20a-E201-1] Synchrotron X-ray Topography Observation of Defects in HVPE-Grown Epitaxial Film of β-Ga₂O₃

[20a-E201-2] Stacking Faults in β-Ga₂O₃ I. Slip System and Partial Dislocations

[20a-E201-3] Stacking Faults in β-Ga₂O₃ II. Observation by X-ray Topography

△ [20a-E201-4] Relationship between crystal defects and leakage current of HVPE (001) β-Ga₂O₃Schottky barrier diodes

[20a-E201-5] Growth of high-quality single crystals of β-Ga₂O₃ by FZ method

[20a-E201-6] Structural Analysis of (AlGa)₂O₃ Thin Films on Ga₂O₃ (010) Substrates Grown by RF-MBE

△ [20a-E201-7] Removal of Si surface impurities from β-Ga₂O₃ (100) substrate by using wet etching

[20a-E201-8] Crystal Orientation of NiO Thin Films Formed on β-Ga₂O₃ Substrates

[20a-E201-9] UV Detection Properties of NiO/β-Ga₂O₃ Heterojunction Photodiodes

Authentication

Session information

[20a-E201-1~9] 21.1 Joint Session K "Wide bandgap oxide semiconductor materials and devices"

△ [20a-E201-1] Synchrotron X-ray Topography Observation of Defects in HVPE-Grown Epitaxial Film of β-Ga2O3

[20a-E201-2] Stacking Faults in β-Ga2O3 I. Slip System and Partial Dislocations

[20a-E201-3] Stacking Faults in β-Ga2O3 II. Observation by X-ray Topography

△ [20a-E201-4] Relationship between crystal defects and leakage current of HVPE (001) β-Ga2O3 Schottky barrier diodes

[20a-E201-5] Growth of high-quality single crystals of β-Ga2O3 by FZ method

[20a-E201-6] Structural Analysis of (AlGa)2O3 Thin Films on Ga2O3 (010) Substrates Grown by RF-MBE

△ [20a-E201-7] Removal of Si surface impurities from β-Ga2O3 (100) substrate by using wet etching

[20a-E201-8] Crystal Orientation of NiO Thin Films Formed on β-Ga2O3 Substrates

[20a-E201-9] UV Detection Properties of NiO/β-Ga2O3 Heterojunction Photodiodes

Authentication

△ [20a-E201-1] Synchrotron X-ray Topography Observation of Defects in HVPE-Grown Epitaxial Film of β-Ga₂O₃

[20a-E201-2] Stacking Faults in β-Ga₂O₃ I. Slip System and Partial Dislocations

[20a-E201-3] Stacking Faults in β-Ga₂O₃ II. Observation by X-ray Topography

△ [20a-E201-4] Relationship between crystal defects and leakage current of HVPE (001) β-Ga₂O₃Schottky barrier diodes

[20a-E201-5] Growth of high-quality single crystals of β-Ga₂O₃ by FZ method

[20a-E201-6] Structural Analysis of (AlGa)₂O₃ Thin Films on Ga₂O₃ (010) Substrates Grown by RF-MBE

△ [20a-E201-7] Removal of Si surface impurities from β-Ga₂O₃ (100) substrate by using wet etching

[20a-E201-8] Crystal Orientation of NiO Thin Films Formed on β-Ga₂O₃ Substrates

[20a-E201-9] UV Detection Properties of NiO/β-Ga₂O₃ Heterojunction Photodiodes