Tatsuya Ezaki

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Speaker, Author, Co-Author

Sun. Mar 18, 2018 9:00 AM - 11:45 AM E202 (57-202)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[18a-E202-1~10] 15.4 III-V-group nitride crystals

10:00 AM - 10:15 AM

[18a-E202-5] Facet growth of GaN with low dislocation density using Ga,N double polarity
by Hydride Vapor Phase Epitaxy

〇Tatsuya Ezaki¹, Yusuke Shigefuji², Narihito Okada¹, Kazuyuki Tadatomo¹ (1.Grad. School of Sci. & Technology for Innovation Yamaguchi Univ., 2.Department of Eng., Yamaguchi Univ.)