Takuya Onodera

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Speaker, Author, Co-Author

Sat. Mar 17, 2018 9:00 AM - 11:45 AM E202 (57-202)

Oral presentation
| 15 Crystal Engineering
| 15.4 III-V-group nitride crystals

[17a-E202-1~10] 15.4 III-V-group nitride crystals

9:15 AM - 9:30 AM

△ [17a-E202-2] Fabrication of Polarity-Inverted GaN by Surface-Activated Wafer Bonding and Silicon Removal

〇Takuya Onodera¹, Masahiro Uemukai¹, Kazuya Takahashi², Motoaki Iwaya², Isamu Akasaki², Yusuke Hayashi³, Hideto Miyake³, Maki Kushimoto⁴, Heajeong Cheong⁵, Yoshio Honda⁵, Hiroshi Amano⁵, Ryuji Katayama¹ (1.Grad. School of Eng., Osaka Univ., 2.Fac. Sci. & Tech., Meijo Univ., 3.RIS, Mie Univ., 4.Dept. of Electronics, Nagoya Univ., 5.Nagoya Univ. IMaSS)

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