yuya yamaoka

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Speaker, Author, Co-Author

Sat. Mar 17, 2018 4:00 PM - 6:00 PM P12 (P)

Poster presentation
| 13 Semiconductors
| 13.7 Compound and power electron devices and process technology

[17p-P12-1~27] 13.7 Compound and power electron devices and process technology

4:00 PM - 6:00 PM

[17p-P12-22] Influence of MOCVD reactor environment on AlGaN/GaN HEMT growth on Si

〇yuya yamaoka^1,2, Akinori Ubukata¹, Yoshiki Yano¹, Toshiya Tabuchi¹, Koh Matsumoto¹, Takashi Egawa² (1.Taiyo Nippon Sanso Corp., 2.Nagoya Inst. of Tech.)

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