Naohisa Inoue

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Speaker, Author, Co-Author

Sun. Mar 18, 2018 1:15 PM - 7:30 PM D103 (56-103)

Oral presentation
| 15 Crystal Engineering
| 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

6:45 PM - 7:00 PM

[18p-D103-21] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(12) On the lifetime degradation of nitrogen doped FZ silicon by annealing

〇Naohisa Inoue^2,1, Yuichi Kawamura² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

7:00 PM - 7:15 PM

[18p-D103-22] Measurement of carbon concentration in silicon crystal (XIV) Fabrication of reference sample and block gauge down to 10¹³cm^-3 for IR measurement

〇Naohisa Inoue^1,2, Yuichi Kawamura² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

7:15 PM - 7:30 PM

[18p-D103-23] Measurement of carbon concentration in silicon crystal (XV) 2^nd generation IR measurement down to 10¹³cm^-3 in the international network

〇Naohisa Inoue^1,2, Yuichi Kawamura² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)