Oral presentation

15 Crystal Engineering » 15.7 Crystal characterization, impurities and crystal defects

[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

Sun. Mar 18, 2018 1:15 PM - 7:30 PM D103 (56-103)

Kentaro Kutsukake(Nagoya Univ.), Yutaka Ohno(Tohoku Univ.), Hiroaki Kariyazaki(GWJ), Shotaro Takeuchi(Ohsaka Univ.)

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1:15 PM - 1:30 PM

△ [18p-D103-1] Characteristics of Molecular Ion Implanted Epitaxial Wafers (1) - A study of CH₂P ion implanted silicon epitaxial wafers-

〇Ryo Hirose¹, Ryosuke Okuyama¹, Takeshi Kadono¹, Ayumi Masada¹, Satoshi Shigematsu¹, Kouji Kobayashi¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

1:30 PM - 1:45 PM

[18p-D103-2] Characteristic of Molecular Ion Implanted Epitaxial Wafers (2)
-Dissociation and Association Behavior Kinetic of Hydrogen in CH₂P Cluster Projection Range-

〇Ryosuke Okuyama¹, Ayumi Masada¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Ryo Hirose¹, Takeshi Kadono¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

1:45 PM - 2:00 PM

[18p-D103-3] Characteristic of Molecular Ion Implanted Epitaxial Wafers (3)
- Annealing Behavior of Hydrogen Trapped Implantation related defects using RTA -

〇TAKESHI KADONO¹, Ryosuke Okuyama¹, Ryo Hirose¹, Ayumi Masada¹, Koji Kobayashi¹, Satoshi Shigematsu¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

2:00 PM - 2:15 PM

△ [18p-D103-4] Characteristic of Molecular Ion Implanted Epitaxial Wafers (4) -A Study of Recrystallization of Implantation-related Defect Using Flash Lamp Annealing-

〇kouji kobayashi¹, Ryosuke Okuyama¹, Ayumi Masada¹, Satoshi Shigematsu¹, Ryo Hirose¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO CORPORATION)

2:15 PM - 2:30 PM

△ [18p-D103-5] Characteristic of Molecular Ion Implaned Epitaxial Wafers (5)
-Getering Behavior Analysis of Implantation-related Defects in CH₃O Ion Implanted Wafers Using Atom Probe Tomography-

〇Satoshi Shigematsu¹, Ryosuke Okuyama¹, Ryo Hirose¹, Takeshi Kadono¹, Koji Kobayashi¹, Ayumi Masada¹, Yoshihiro Koga¹, Hidehiko Okuda¹, Kazunari Kurita¹ (1.SUMCO)

2:30 PM - 2:45 PM

[18p-D103-6] Formation behavior of oxygen precipitates in ultra-high temperature RTP wafers

〇Haruo Sudo¹, Hideyuki Okamura¹, Susumu Maeda¹, Tatsuhiko Aoki¹, Kozo Nakamura³, Koji Sueoka² (1.Base Technology, Technology, GlobalWafers Japan Co., Ltd., 2.Faculty of Computer Science and System Engineering, Okayama Prefectural Univ., 3.Regional Cooperative Research Organization, Okayama Prefectural Univ.)

2:45 PM - 3:00 PM

[18p-D103-7] Investigation for oxygen precipitation model in ultra-high temperature RTP wafers

〇Susumu Maeda¹, Haruo Sudo¹, Hideyuki Okamura¹, Kozo Nakamura³, Koji Sueoka² (1.Base Technology, Technology, GlobalWafers Japan Co., Ltd., 2.Faculty of Computer Science and System Engineering, Okayama Prefectural Univ., 3.Regional Cooperative Research Organization, Okayama Prefectural Univ.)

3:15 PM - 3:30 PM

[18p-D103-8] Competitive Gettering of Impurities between Oxide Precipitates and Film Stress in Silicon Wafers

〇Kazuhisa Torigoe¹, Toshiaki Ono¹ (1.SUMCO)

3:30 PM - 3:45 PM

[18p-D103-9] Gettering Mechanism of Copper in n-type Silicon Wafers

〇Rie Ozaki¹, Kazuhisa Torigoe¹, Taisuke Mizuno¹, Masashi Nishimura¹, Kazuhiro Yamamoto¹ (1.SUMCO)

3:45 PM - 4:00 PM

[18p-D103-10] Strength Analysis of Impurity-doped Si Wafers by HAS-model

〇kousuke Takata¹, Jun Fujise¹, Bonggyun Ko¹, Toshiaki Ono¹ (1.SUMCO)

4:00 PM - 4:15 PM

[18p-D103-11] Dependence of oxygen on dislocation density in Si single crystal for solar cells during solidification and cooling process

Tomoro Ide¹, 〇Satoshi Nakano², Hirofumi Harada², Yoshiji Miyamura², Koichi Kakimoto^1,2 (1.Kyushu Univ., 2.RIAM, Kyushu Univ.)

4:15 PM - 4:30 PM

[18p-D103-12] Origin of Room-Temperature Photoluminescence around C-line in Electron-Irradiated Si

〇Michio Tajima¹, Kiuchi Hirotatsu¹, Yoichiro Ishikawa¹, Atsushi Ogura¹ (1.Meiji Univ.)

4:30 PM - 4:45 PM

△ [18p-D103-13] Carbon Analysis using Room-Temperature Photoluminescence around C-line in Electron-Irradiated Si

〇Yoichiro Ishikawa¹, Michio Tajima¹, Hirotatsu Kiuchi¹, Kazuchi Miyoshi¹, Atsushi Ogura¹ (1.Meiji Univ.)

5:00 PM - 5:15 PM

[18p-D103-14] Concentration of vacancies in silicon wafers quenched at high-temperature thermal equilibrium measured by low-temperature ultrasonic technique

〇Hiroshi Kaneta¹, Yuichi Nemoto², Mitsuhiro Akatsu³, Keisuke Mitsumoto² (1.Kyushu Inst. of Tech., 2.Niigata Univ., 3.Phys. Dpt. Niigata Univ.)

5:15 PM - 5:30 PM

[18p-D103-15] Oxygen concentration in thin silicon wafer for solar cell determined by FT-IR measurement

〇(M1)Kenshiro Usuki¹ (1.Fukushima Univ.)

5:30 PM - 5:45 PM

[18p-D103-16] Pattern Recognition of Etchpits on Unpolished Surface of Multicrystalline Silicon Using Machine Learning

〇Takuto Kojima¹, Atsushi Ogura¹, Kenji Fukui², Manabu Komoda², Junichi Atobe² (1.Meiji Univ., 2.Kyocera Corporation)

5:45 PM - 6:00 PM

[18p-D103-17] Evaluation of Si fast recovery diode by multifunctional scanning probe microscope

〇Hidekazu Yamamoto¹, Takeshi Uruma², Nobuo Satoh¹, Futoshi Iwata² (1.Chiba Inst. of Tech., 2.Graduate School of Sci. and Tech., Shizuoka Univ.)

6:00 PM - 6:15 PM

[18p-D103-18] Evaluation of SiC-Schottky barrier diode by multifunctional scanning probe microscope

〇Yuuki Uchida¹, Takanori Ikarashi¹, Katsumi Kokumai¹, Mizuki Nakajima¹, Nobuo Satoh¹, Hidekazu Yamamoto¹ (1.Chiba Inst. of Tech.)

6:15 PM - 6:30 PM

[18p-D103-19] Stress Characterization of SiO₂ / SiC interface by Scanning Near-Field Optical Raman Microscope

〇Masataka Murakami¹, Yasuhiko Fujita¹ (1.Toray Research Center)

6:30 PM - 6:45 PM

[18p-D103-20] Detection of non-radiative recombination level in UV-LED by irradiation of forbidden band excitation light.

〇Ken Matsuda¹, Norihiko Kamata¹, Dulal Haque¹, Ismail Hossain¹, Takeshi Fukuda¹ (1.Saitma Univ.)

6:45 PM - 7:00 PM

[18p-D103-21] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(12) On the lifetime degradation of nitrogen doped FZ silicon by annealing

〇Naohisa Inoue^2,1, Yuichi Kawamura² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

7:00 PM - 7:15 PM

[18p-D103-22] Measurement of carbon concentration in silicon crystal (XIV) Fabrication of reference sample and block gauge down to 10¹³cm^-3 for IR measurement

〇Naohisa Inoue^1,2, Yuichi Kawamura² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

7:15 PM - 7:30 PM

[18p-D103-23] Measurement of carbon concentration in silicon crystal (XV) 2^nd generation IR measurement down to 10¹³cm^-3 in the international network

〇Naohisa Inoue^1,2, Yuichi Kawamura² (1.Tokyo Univ. Agri. & Technol., 2.Osaka Pref. Univ.)

Session information

[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

△ [18p-D103-1] Characteristics of Molecular Ion Implanted Epitaxial Wafers (1) - A study of CH₂P ion implanted silicon epitaxial wafers-

[18p-D103-2] Characteristic of Molecular Ion Implanted Epitaxial Wafers (2)
-Dissociation and Association Behavior Kinetic of Hydrogen in CH₂P Cluster Projection Range-

[18p-D103-3] Characteristic of Molecular Ion Implanted Epitaxial Wafers (3)
- Annealing Behavior of Hydrogen Trapped Implantation related defects using RTA -

△ [18p-D103-4] Characteristic of Molecular Ion Implanted Epitaxial Wafers (4) -A Study of Recrystallization of Implantation-related Defect Using Flash Lamp Annealing-

△ [18p-D103-5] Characteristic of Molecular Ion Implaned Epitaxial Wafers (5)
-Getering Behavior Analysis of Implantation-related Defects in CH₃O Ion Implanted Wafers Using Atom Probe Tomography-

[18p-D103-6] Formation behavior of oxygen precipitates in ultra-high temperature RTP wafers

[18p-D103-7] Investigation for oxygen precipitation model in ultra-high temperature RTP wafers

[18p-D103-8] Competitive Gettering of Impurities between Oxide Precipitates and Film Stress in Silicon Wafers

[18p-D103-9] Gettering Mechanism of Copper in n-type Silicon Wafers

[18p-D103-10] Strength Analysis of Impurity-doped Si Wafers by HAS-model

[18p-D103-11] Dependence of oxygen on dislocation density in Si single crystal for solar cells during solidification and cooling process

[18p-D103-12] Origin of Room-Temperature Photoluminescence around C-line in Electron-Irradiated Si

△ [18p-D103-13] Carbon Analysis using Room-Temperature Photoluminescence around C-line in Electron-Irradiated Si

[18p-D103-14] Concentration of vacancies in silicon wafers quenched at high-temperature thermal equilibrium measured by low-temperature ultrasonic technique

[18p-D103-15] Oxygen concentration in thin silicon wafer for solar cell determined by FT-IR measurement

[18p-D103-16] Pattern Recognition of Etchpits on Unpolished Surface of Multicrystalline Silicon Using Machine Learning

[18p-D103-17] Evaluation of Si fast recovery diode by multifunctional scanning probe microscope

[18p-D103-18] Evaluation of SiC-Schottky barrier diode by multifunctional scanning probe microscope

[18p-D103-19] Stress Characterization of SiO₂ / SiC interface by Scanning Near-Field Optical Raman Microscope

[18p-D103-20] Detection of non-radiative recombination level in UV-LED by irradiation of forbidden band excitation light.

[18p-D103-21] High sensitivity infrared absorption spectroscopy and infrared defect dynamics of silicon crystal(12) On the lifetime degradation of nitrogen doped FZ silicon by annealing

[18p-D103-22] Measurement of carbon concentration in silicon crystal (XIV) Fabrication of reference sample and block gauge down to 10¹³cm^-3 for IR measurement

[18p-D103-23] Measurement of carbon concentration in silicon crystal (XV) 2^nd generation IR measurement down to 10¹³cm^-3 in the international network

Authentication

Session information

[18p-D103-1~23] 15.7 Crystal characterization, impurities and crystal defects

△ [18p-D103-1] Characteristics of Molecular Ion Implanted Epitaxial Wafers (1) - A study of CH2P ion implanted silicon epitaxial wafers-

△ [18p-D103-4] Characteristic of Molecular Ion Implanted Epitaxial Wafers (4) -A Study of Recrystallization of Implantation-related Defect Using Flash Lamp Annealing-

△ [18p-D103-5] Characteristic of Molecular Ion Implaned Epitaxial Wafers (5)-Getering Behavior Analysis of Implantation-related Defects in CH3O Ion Implanted Wafers Using Atom Probe Tomography-

△ [18p-D103-13] Carbon Analysis using Room-Temperature Photoluminescence around C-line in Electron-Irradiated Si

Authentication

△ [18p-D103-1] Characteristics of Molecular Ion Implanted Epitaxial Wafers (1) - A study of CH₂P ion implanted silicon epitaxial wafers-

△ [18p-D103-5] Characteristic of Molecular Ion Implaned Epitaxial Wafers (5)
-Getering Behavior Analysis of Implantation-related Defects in CH₃O Ion Implanted Wafers Using Atom Probe Tomography-