4:00 PM - 6:00 PM [18p-P14-16] Nitrogen doping of 4H-SiC MOS interface after 15NO post-oxidation anneal characterized by electron-spin-resonance (ESR) spectroscopy 〇Takahide Umeda1, Mitsuru Sometani2, Shinsuke Harada2 (1.Univ. of Tsukuba, 2.AIST)