Ryosuke Ohshima

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Speaker, Author, Co-Author

Mon. Mar 19, 2018 9:00 AM - 12:15 PM D103 (56-103)

Oral presentation
| 15 Crystal Engineering
| 15.6 Group IV Compound Semiconductors (SiC)

[19a-D103-1~12] 15.6 Group IV Compound Semiconductors (SiC)

11:30 AM - 11:45 AM

[19a-D103-10] Multi-physics simulations of high temperature CVD processes of SiC

〇Ryosuke Ohshima¹, Subaru Komura², Kento Kawakami², Yoshihiro Yamamoto², Kenta Chokawa², Katsunori Yoshimatsu^2,3, Naoya Okamoto², Emi Makino⁴, Norikazu Hosokawa⁴, Shoichi Onda³, Yoshihiro Kangawa^5,3, Koichi Kakimoto⁵, Kenji Shiraishi^2,3 (1.Nagoya Univ., 2.Graduate School of Engineering,Nagoya Univ., 3.IMaSS, 4.DENSO CORP., 5.Kyushu univ.)

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